Invited Speakers

 

 

 

 

Hiroki Ago
Kyushu Univ, Japan

 

 

 

Controlled CVD growth of multilayer hBN for 2.5D applications

 

Deji Akinwande
UT-Austin, USA

 

 

Monolayer Boron Nitride for energy-efficient memory computing and 6G communication switches

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Aaron Sternbach
Columbia University, USA

 

 

A tale of two crystals: negative refraction in hyperbolic hetero-bicrystals

 

 

Moshe Ben Shalom
Tel Aviv University, Israel

 

 

 

Ladder Ferroelectricity

 

Duanjun Cai

Xiamen University, China

 

 

 

P/N Type Conductions and Large-Scale Synthesis of Hexagonal Boron Nitride

 

Vladimir Dyakonov
Würzburg Univ, Germany

 

 

Coherent Control and Sensing Applications of the Boron Vacancy in hexagonal Boron Nitride

 

 

James H. Edgar
KSU, USA

 

 

Hexagonal Boron Nitride Crystal Growth from Molten Metal Solutions

 

 

Adam Gali
Budapest, Hungary

 

 

Defect spins and qubits in hexagonal boron nitride from first principles theory guiding experiments

 

 

Dmitri Golberg
QUT, Australia

 

 

 

 

Boron nitride nanotube and nanosheet properties and functions as revealed by in situ transmission electron microscopy

 

Mehran Kianinia
UTS, Australia

 

 

Toward coherent single photon emission from hexagonal boron nitride

 

 

 

Jong-Kyu Kim
Postech, Korea

 

 

 

Growth of suspended boron nitride on GaN substrate by MOCVD

 

 

 

Jong-Hwan Kim
Postech, Korea

 

 

 

Probing Deep-Ultraviolet Optoelectronic Processes in Hexagonal Boron Nitride

 

 

Tongcang Li
Purdue, USA

 

 

Nuclear spin control in hexagonal boron nitride

 

 

Bilu Liu
Tsinghua-Shenzen, China

 

 

Mass-production of two-dimensional h-BN and its liquid crystals for deep UV light modulation

 

 

 

Isaac Luxmoore
Exeter, UK

 

 

Protection of the Spin Coherence of Defects in Hexagonal Boron Nitride

 

 

Zetian Mi
Michigan Univ, USA

 

 

Molecular beam epitaxy of hBN and emerging device applications

 

 

Alexey Nikitin
DIPC, Spain

 

 

 

Molecules-BN interaction via polaritons

 

Sergei Novikov
Nottingham Univ, UK

 

 

High-temperature MBE of hBN monolayers and graphene-hBN lateral heterostructures

 

 

Aleksandra Radenovic
EPFL, Switzerland

 

 

 Nanofluidics-next frontiers with hBN

 

Adrien Rousseau
Montpellier Univ, France

 

 

 

Polytypism in boron nitride

 

Hyeon Suk Shin
Ulsan, Korea

 

 

Current status and challenges in hBN growth by chemical vapor deposition

 

Suresh Sundaram
Georgia Tech-Europe

 

 

MOVPE growth of layered boron nitride - scaling up and applications


Takashi Taniguchi
NIMS, Japan

 

 

Solution growth of hBN single crystals and their residual impurity control

 

Jean-Philippe Tetienne
RMIT Univ, Australia

 

 

Quantum sensing and imaging with spin defects in hBN

 

Joel IJ Wang
MIT, USA

 

Hexagonal, Boron Nitride as a Low-loss Dielectric for High-performance, Small-footprint Superconducting Qubit Devices

 

   

 

   

 

 

 

 

 

 

 

 

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